NEW TECHNIQUE IN THE CALCULATION OF DEFECTS IN SOLIDS BY MOLECULAR METHODS - PURE AND CU-DOPED ZNS

被引:10
作者
FERREIRA, LG [1 ]
DESIQUEIRA, ML [1 ]
机构
[1] UNIV FED MINAS GERAIS,INST CIENCIAS EXACTAS,BR-30000 BELO HORIZONTE,MG,BRAZIL
来源
PHYSICAL REVIEW B | 1986年 / 34卷 / 08期
关键词
D O I
10.1103/PhysRevB.34.5315
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:5315 / 5319
页数:5
相关论文
共 26 条
[1]   NEW SELF-CONSISTENT APPROACH TO THE ELECTRONIC-STRUCTURE OF LOCALIZED DEFECTS IN SOLIDS [J].
BARAFF, GA ;
SCHLUTER, M .
PHYSICAL REVIEW B, 1979, 19 (10) :4965-4979
[2]   NEW APPROACH FOR SOLVING THE DENSITY-FUNCTIONAL SELF-CONSISTENT-FIELD PROBLEM [J].
BENDT, P ;
ZUNGER, A .
PHYSICAL REVIEW B, 1982, 26 (06) :3114-3137
[3]   SELF-CONSISTENT METHOD FOR POINT-DEFECTS IN SEMICONDUCTORS - APPLICATION TO VACANCY IN SILICON [J].
BERNHOLC, J ;
LIPARI, NO ;
PANTELIDES, ST .
PHYSICAL REVIEW LETTERS, 1978, 41 (13) :895-899
[4]   CRYSTALLINE CLUSTER MODEL FOR IONIC SOLIDS - NACL [J].
BRESCANSIN, LM ;
FERREIRA, LG .
PHYSICAL REVIEW B, 1979, 20 (08) :3415-3421
[5]   FINE STRUCTURE OF INFRARED ABSORPTION AND EMISSION SPECTRA OF CU2+ IN ZNS AND CDS CRYSTALS [J].
BROSER, I ;
MAIER, H ;
SCHULZ, HJ .
PHYSICAL REVIEW, 1965, 140 (6A) :2135-+
[6]  
DESIQUEIRA ML, 1975, CHEM PHYS LETT, V32, P359, DOI 10.1016/0009-2614(75)85144-X
[7]   ELECTRONIC-STRUCTURE OF CU, NI, CO, AND FE SUBSTITUTIONAL IMPURITIES IN GALLIUM-ARSENIDE [J].
FAZZIO, A ;
LEITE, JR .
PHYSICAL REVIEW B, 1980, 21 (10) :4710-4720
[8]   A NEW VERSION OF THE VARIATIONAL CELLULAR METHOD FOR POLYATOMIC SYSTEMS [J].
FERREIRA, LG ;
DESIQUEIRA, ML .
JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS, 1983, 16 (17) :3111-3123
[9]   ELECTRONIC STATES OF TRANSITION-METAL IMPURITIES IN II-VI-SEMICONDUCTOR AND III-V-SEMICONDUCTORS [J].
GEMMA, N .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (13) :2333-2356
[10]  
Guimaraes P. S., 1983, Revista Brasileira de Fisica, V13, P99