MAPPING QUANTUM-WELL ENERGY PROFILES OF III-V-HETEROSTRUCTURES BY SCANNING-TUNNELING-MICROSCOPE-EXCITED LUMINESCENCE

被引：71

作者：

RENAUD, P

ALVARADO, SF

机构：

[1] IBM Research Division, Zurich Research Laboratory, 8803 Rschlikon

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.44.6340

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A technique has been developed that allows the energy profile of quantum wells in AlxGa1-xAs heterostructures to be mapped directly. The lateral resolution is a few nanometers, which allows the band-bending profile and the conduction-band discontinuity of interfaces within the heterostructure to be probed directly. The technique is based on the excitation of luminescence in the III-V compounds using the tip of a scanning tunneling microscope as a source of electrons.

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页码：6340 / 6343

页数：4

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