CRITERION FOR OPTIMUM PUNCH-THROUGH FACTOR OF GALLIUM-ARSENIDE IMPATT DIODES

被引：3

作者：

BLAKEY, PA ^{[1
]}

CULSHAW, B ^{[1
]}

GIBLIN, RA ^{[1
]}

机构：

[1] UCL, DEPT ELECT & ELECTR ENGN, LONDON WC1E 6BT, ENGLAND

来源：

关键词：

D O I：

10.1049/el:19760220

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：284 / 286

页数：3

共 8 条

[1]

AONI Y, 1975, P IEEE, V63, P724

[2]

BLAKEY PA, 1976, THESIS U LONDON

[3]

BLAKEY PA, 1974, 4TH P EUR MICR C MON

[4] AVALANCHE-DIODE OSCILLATORS .2. CAPABILITIES AND LIMITATIONS [J].

CULSHAW, B ;

GIBLIN, RA ;

BLAKEY, PA .

[5]

CULSHAW B, 1975, 5TH P CORN C ACT SEM

[6]

CULSHAW B, TO BE PUBLISHED

[7] AVALANCHE BREAKDOWN OF GALLIUM ARSENIDE P-N JUNCTIONS [J].

HALL, R ;

LECK, JH .

VANIPEREN, BB ;

TJASSENS, H .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1971, 59 (06) :1032-+