AVALANCHE-DIODE OSCILLATORS .2. CAPABILITIES AND LIMITATIONS

被引：8

作者：

CULSHAW, B ^{[1
]}

GIBLIN, RA ^{[1
]}

BLAKEY, PA ^{[1
]}

机构：

[1] UCL, DEPT ELECTR & ELECT ENGN, TORRINGTON PL, LONDON WC1E 6BT, ENGLAND

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1975年 / 39卷 / 02期

关键词：

D O I：

10.1080/00207217508920473

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 172

页数：52

共 54 条

[1]

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[2] EFFICIENCY ENHANCEMENT IN AVALANCHE-DIODES BY DEPLETION-REGION-WIDTH MODULATION [J].

BLAKEY, PA ;

CULSHAW, B ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1974, 10 (21) :435-436

[3]

BLAKEY PA, 1974, EUROPEAN MICROWAVE C

[4] APPROXIMATE LARGE-SIGNAL ANALYSIS OF IMPATT OSCILLATORS [J].

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[5] PULSE-DRIVEN SILICON P-N JUNCTION AVALANCHE OSCILLATORS FOR 0.9 TO 20 MM BAND [J].

BOWMAN, LS ;

BURRUS, CA .

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[6] ELIMINATION OF TUNING-INDUCED BURNOUT AND BIAS-CIRCUIT OSCILLATIONS IN IMPATT OSCILLATORS [J].

BRACKETT, CA .

BELL SYSTEM TECHNICAL JOURNAL, 1973, 52 (03) :271-306

[7]

BROOK P, 1974, COMMUNICATION

[8] EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES [J].

CHIVE, M ;

CONSTANT, E ;

LEFEBVRE, M ;

PRIBETICH, J .

PROCEEDINGS OF THE IEEE, 1975, 63 (05) :824-826

[9] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES [J].

CULSHAW, B ;

BLAKEY, PA ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1975, 11 (05) :102-104

[10]

CULSHAW B, 1975, P IEEE, P321

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