ANALYSIS OF THE HYDROGEN REDUCTION OF SILICON TETRACHLORIDE PROCESS ON THE BASIS OF A QUASI-EQUILIBRIUM MODEL

被引：54

作者：

SEDGWICK, TO

机构：

来源：

关键词：

D O I：

10.1149/1.2426009

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1381 / 1383

页数：3

共 9 条

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[8] EPITAXIAL SILICON FILMS BY THE HYDROGEN REDUCTION OF SIC1
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