STABILIZATION OF NORMAL-GAAS IN ACIDIC CONCENTRATED IODIDE ELECTROLYTES

被引：23

作者：

ALLONGUE, P ^{[1
]}

CACHET, H ^{[1
]}

CLECHET, P ^{[1
]}

FROMENT, M ^{[1
]}

MARTIN, JR ^{[1
]}

VERNEY, E ^{[1
]}

机构：

[1] ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 03期

关键词：

D O I：

10.1149/1.2100518

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：620 / 625

页数：6

共 33 条

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[2] PHOTODISSOLUTION KINETICS OF N-GAAS IN 1M KOH AND CALCULATION OF THE STABILIZATION BY SE-2- - EFFECT OF THE RU-3+ SURFACE-TREATMENT
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (12) : 2861 - 2868
[3] BAND-EDGE SHIFT AND SURFACE-CHARGES AT ILLUMINATED N-GAAS AQUEOUS-ELECTROLYTE JUNCTIONS - SURFACE-STATE ANALYSIS AND SIMULATION OF THEIR OCCUPATION RATE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (01) : 45 - 52
[4] FLAT-BAND POTENTIAL DETERMINATION AND SURFACE MODIFICATIONS AT SEMICONDUCTOR LIQUID JUNCTIONS
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CACHET, H
[J]. SOLID STATE COMMUNICATIONS, 1985, 55 (01) : 49 - 53
[5] STABLE SEMICONDUCTOR LIQUID JUNCTION CELL WITH 9PERCENT SOLAR TO ELECTRICAL CONVERSION EFFICIENCY
CHANG, KC
HELLER, A
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MILLER, B
[J]. SCIENCE, 1977, 196 (4294) : 1097 - 1099
[6] THE PHOTOCURRENT-VOLTAGE CHARACTERISTICS OF THE HETEROJUNCTION COMBINATION N-SI/SNO2/REDOX-ELECTROLYTE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (11) : 2173 - 2179
[7] SEMICONDUCTOR ELECTRODES .48. PHOTO-OXIDATION OF HALIDES AND WATER ON N-SILICON PROTECTED WITH SILICIDE LAYERS
FAN, FRF
KEIL, RG
BARD, AJ
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1983, 105 (02) : 220 - 224
[8] FAN RF, 1984, J ELCHEM SO, V131, P829
[9] INVESTIGATION OF PHOTOELECTROCHEMICAL CORROSION OF SEMICONDUCTORS .3. EFFECTS OF METAL LAYER ON STABILITY OF GAAS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 1939 - 1943
[10] ELECTROCHEMICAL STUDIES OF PHOTOCORROSION OF N-CDSE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (01) : 28 - 33

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