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STABILIZATION OF NORMAL-GAAS IN ACIDIC CONCENTRATED IODIDE ELECTROLYTES
被引:23
作者
:
ALLONGUE, P
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ALLONGUE, P
[
1
]
CACHET, H
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
CACHET, H
[
1
]
CLECHET, P
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
CLECHET, P
[
1
]
FROMENT, M
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
FROMENT, M
[
1
]
MARTIN, JR
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
MARTIN, JR
[
1
]
VERNEY, E
论文数:
0
引用数:
0
h-index:
0
机构:
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
VERNEY, E
[
1
]
机构
:
[1]
ECOLE CENT LYON,CNRS,UNITE 404,PHYSICOCHIM INTERFACES LAB,F-69131 ECULLY,FRANCE
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1987年
/ 134卷
/ 03期
关键词
:
D O I
:
10.1149/1.2100518
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:620 / 625
页数:6
相关论文
共 33 条
[21]
SURFACE CHARGING EFFECTS DURING PHOTOANODIC DISSOLUTION OF N-GAAS ELECTRODES
KELLY, JJ
论文数:
0
引用数:
0
h-index:
0
KELLY, JJ
NOTTEN, PHL
论文数:
0
引用数:
0
h-index:
0
NOTTEN, PHL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(12)
: 2452
-
2459
[22]
LEWIS NS, 1984, ANNU REV MATER SCI, V14, P95
[23]
METAL FILMED SEMICONDUCTOR PHOTOELECTROCHEMICAL CELLS
MENEZES, S
论文数:
0
引用数:
0
h-index:
0
MENEZES, S
HELLER, A
论文数:
0
引用数:
0
h-index:
0
HELLER, A
MILLER, B
论文数:
0
引用数:
0
h-index:
0
MILLER, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(06)
: 1268
-
1273
[24]
EFFICIENT PHOTO-ELECTROCHEMICAL CONVERSION OF SOLAR-ENERGY WITH NORMAL-TYPE SILICON SEMICONDUCTOR ELECTRODES SURFACE-DOPED WITH IIIA-GROUP ELEMENTS
NAKATO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
NAKATO, Y
TSUMURA, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
TSUMURA, A
TSUBOMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
TSUBOMURA, H
[J].
CHEMISTRY LETTERS,
1982,
(07)
: 1071
-
1074
[25]
PHOTO-VOLTAGE AND STABILITY OF AN N-TYPE SILICON SEMICONDUCTOR COATED WITH METAL OR METAL-FREE PHTHALOCYANINE THIN-FILMS IN AQUEOUS REDOX SOLUTIONS
NAKATO, Y
论文数:
0
引用数:
0
h-index:
0
NAKATO, Y
SHIOJI, M
论文数:
0
引用数:
0
h-index:
0
SHIOJI, M
TSUBOMURA, H
论文数:
0
引用数:
0
h-index:
0
TSUBOMURA, H
[J].
JOURNAL OF PHYSICAL CHEMISTRY,
1981,
85
(12)
: 1670
-
1672
[26]
SURFACE INTERMEDIATES OF AN N-TYPE GALLIUM-PHOSPHIDE ELECTRODE AS RELATED WITH THE SHIFTS OF THE SURFACE BAND ENERGY INDUCED BY OXIDANTS IN SOLUTION
NAKATO, Y
论文数:
0
引用数:
0
h-index:
0
NAKATO, Y
TSUMURA, A
论文数:
0
引用数:
0
h-index:
0
TSUMURA, A
TSUBOMURA, H
论文数:
0
引用数:
0
h-index:
0
TSUBOMURA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(06)
: 1300
-
1304
[27]
Pourbaix M., 1963, ATLAS EQUILIBRES ELE
[28]
INP AND CDS PHOTO-ANODES IN CONCENTRATED AQUEOUS IODIDE ELECTROLYTES
SCHNEEMEYER, LF
论文数:
0
引用数:
0
h-index:
0
SCHNEEMEYER, LF
MILLER, B
论文数:
0
引用数:
0
h-index:
0
MILLER, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(09)
: 1977
-
1981
[29]
STABILIZATION OF N-TYPE SILICON PHOTOANODES AGAINST PHOTOANODIC DECOMPOSITION WITH THIN-FILMS OF POLYACETYLENE
SIMON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
SIMON, RA
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(09)
: 930
-
932
[30]
THAPER R, 1984, ELECTROCHIM ACTA, V28, P195
←
1
2
3
4
→
共 33 条
[21]
SURFACE CHARGING EFFECTS DURING PHOTOANODIC DISSOLUTION OF N-GAAS ELECTRODES
KELLY, JJ
论文数:
0
引用数:
0
h-index:
0
KELLY, JJ
NOTTEN, PHL
论文数:
0
引用数:
0
h-index:
0
NOTTEN, PHL
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1983,
130
(12)
: 2452
-
2459
[22]
LEWIS NS, 1984, ANNU REV MATER SCI, V14, P95
[23]
METAL FILMED SEMICONDUCTOR PHOTOELECTROCHEMICAL CELLS
MENEZES, S
论文数:
0
引用数:
0
h-index:
0
MENEZES, S
HELLER, A
论文数:
0
引用数:
0
h-index:
0
HELLER, A
MILLER, B
论文数:
0
引用数:
0
h-index:
0
MILLER, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(06)
: 1268
-
1273
[24]
EFFICIENT PHOTO-ELECTROCHEMICAL CONVERSION OF SOLAR-ENERGY WITH NORMAL-TYPE SILICON SEMICONDUCTOR ELECTRODES SURFACE-DOPED WITH IIIA-GROUP ELEMENTS
NAKATO, Y
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
NAKATO, Y
TSUMURA, A
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
TSUMURA, A
TSUBOMURA, H
论文数:
0
引用数:
0
h-index:
0
机构:
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
OSAKA UNIV, FAC ENGN SCI, DEPT CHEM, TOYONAKA, OSAKA 560, JAPAN
TSUBOMURA, H
[J].
CHEMISTRY LETTERS,
1982,
(07)
: 1071
-
1074
[25]
PHOTO-VOLTAGE AND STABILITY OF AN N-TYPE SILICON SEMICONDUCTOR COATED WITH METAL OR METAL-FREE PHTHALOCYANINE THIN-FILMS IN AQUEOUS REDOX SOLUTIONS
NAKATO, Y
论文数:
0
引用数:
0
h-index:
0
NAKATO, Y
SHIOJI, M
论文数:
0
引用数:
0
h-index:
0
SHIOJI, M
TSUBOMURA, H
论文数:
0
引用数:
0
h-index:
0
TSUBOMURA, H
[J].
JOURNAL OF PHYSICAL CHEMISTRY,
1981,
85
(12)
: 1670
-
1672
[26]
SURFACE INTERMEDIATES OF AN N-TYPE GALLIUM-PHOSPHIDE ELECTRODE AS RELATED WITH THE SHIFTS OF THE SURFACE BAND ENERGY INDUCED BY OXIDANTS IN SOLUTION
NAKATO, Y
论文数:
0
引用数:
0
h-index:
0
NAKATO, Y
TSUMURA, A
论文数:
0
引用数:
0
h-index:
0
TSUMURA, A
TSUBOMURA, H
论文数:
0
引用数:
0
h-index:
0
TSUBOMURA, H
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1981,
128
(06)
: 1300
-
1304
[27]
Pourbaix M., 1963, ATLAS EQUILIBRES ELE
[28]
INP AND CDS PHOTO-ANODES IN CONCENTRATED AQUEOUS IODIDE ELECTROLYTES
SCHNEEMEYER, LF
论文数:
0
引用数:
0
h-index:
0
SCHNEEMEYER, LF
MILLER, B
论文数:
0
引用数:
0
h-index:
0
MILLER, B
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1982,
129
(09)
: 1977
-
1981
[29]
STABILIZATION OF N-TYPE SILICON PHOTOANODES AGAINST PHOTOANODIC DECOMPOSITION WITH THIN-FILMS OF POLYACETYLENE
SIMON, RA
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
SIMON, RA
WRIGHTON, MS
论文数:
0
引用数:
0
h-index:
0
机构:
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
MIT,DEPT CHEM,CAMBRIDGE,MA 02139
WRIGHTON, MS
[J].
APPLIED PHYSICS LETTERS,
1984,
44
(09)
: 930
-
932
[30]
THAPER R, 1984, ELECTROCHIM ACTA, V28, P195
←
1
2
3
4
→