RELATIONS BETWEEN ELECTRICAL NOISE AND DISLOCATIONS IN SILICON

被引：25

作者：

YU, KK

JORDAN, AG

LONGINI, RL

机构：

来源：

关键词：

D O I：

10.1063/1.1709377

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：572 / &

共 39 条

ARTHUR, JB ;

GIBSON, AF ;

GRANVILLE, JW ;

PAIGE, EGS .

PHILOSOPHICAL MAGAZINE, 1958, 3 (33) :940-949

[2]

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BESS, L .

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[5] EXCESS NOISE IN DEFORMED GERMANIUM [J].

BROPHY, JJ .

[6]

BROPHY JJ, 1955, PHYS REV, V100, P1261

[7]

BROPHY JJ, 1958, SOLID STATE PHYS E 1, V1, P548

[8] THE ELECTRICAL PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS [J].

BROUDY, RM .

[9]

BURGESS RE, 1956, P PHYS SOC, VB 69, P1020

[10]

CANDLER D, TO BE PUBLISHED