HIGH-QUALITY A-SI-H FILMS AND INTERFACES PREPARED BY VHF PLASMA CVD

被引：14

作者：

ODA, S

YASUKAWA, M

机构：

[1] Department of Physical Electronics, Tokyo Institute of Technology, Meguro-ku, Tokyo, 152, O-okayama

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80211-X

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Characteristics of VHF (144MHz) plasma and properties of hydrogenated amorphous silicon (a-Si:H) films prepared by VHF plasma CVD are described. High quality a-Si:H films with photosensitivity of higher than 3 x 10(6) are obtained at low VHF powers and high pressures. High performance a-Si thin-film-transistors with a mobility of 1.5 cm2/Vs and current on/off ratio of 10(7) are demonstrated. The feature of VHF plasma is discussed in terms of damage-free plasma.

引用

页码：677 / 680

页数：4

共 8 条

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[4] GRAVES DB, 1991, P INT S SEMINAR REAC, P433
[5] GENERATION OF ELECTRON-CYCLOTRON RESONANCE PLASMA IN THE VHF BAND
ODA, S
NODA, J
MATSUMURA, M
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[6] DIAGNOSTIC STUDY OF VHF PLASMA AND DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON FILMS
ODA, S
NODA, J
MATSUMURA, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (10): : 1889 - 1895
[7] Oda S., 1988, MATER RES SOC S P, V118, P117
[8] YASUKAWA M, 1991, 8TH S PLASM P NAG, V277

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