1D-TO-2D TUNNELING IN ELECTRON WAVE-GUIDES

被引:28
作者
EUGSTER, CC
DELALAMO, JA
MELLOCH, MR
ROOKS, MJ
机构
[1] PURDUE UNIV,W LAFAYETTE,IN 47907
[2] CORNELL UNIV,NATL NANOFABRICAT FACIL,ITHACA,NY 14853
来源
PHYSICAL REVIEW B | 1993年 / 48卷 / 20期
关键词
D O I
10.1103/PhysRevB.48.15057
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a comprehensive experimental study of the tunneling and transport characteristics of split-gate ''leaky'' one-dimensional (1D) electron waveguides implemented in AlxGa1-xAs/GaAs heterostructures. In a leaky electron waveguide, electrons can tunnel out of the 1D channel through a thin side wall barrier into an adjacent 2D electron bath. A sharp peak and valley structure is observed in the 1D-to-2D tunneling current as the carrier concentration is modulated in the 1D waveguide through the field-effect action of the split gates. A semiclassical model confirms that the tunneling features originate from the 1D subbands in the channel.
引用
收藏
页码:15057 / 15067
页数:11
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