LOW-TEMPERATURE PYREX GLASS WAFER DIRECT BONDING

被引：18

作者：

PIGEON, F

BIASSE, B

ZUSSY, M

机构：

[1] LET1 (CEA - Technologies avancees) DMITEC-CEN/G, F-38054 Grenoble Cedex

[2] Laboratoire Traitement su Dignal et Instrumentation URA-CRNS 842, Faculte des Sciences et Techniques, F-42023 St Etienne Cedex 2, 23, rue du Docteur Paul Michelon

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 10期

关键词：

WAFER BONDING; BOROSILICATE GLASSES;

D O I：

10.1049/el:19950554

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors focus on the low-temperature direct bonding of Pyrex glass wafers. A hydrophilic treatment has been used to decrease the process temperature. after a final heat treatment at 350 degrees C, a tensile strength of similar to 250kgf/cm(2) has been measured.

引用

收藏

页码：792 / 793

页数：2

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