REPLACEMENT OF MAGNESIUM IN INGAAS/INP HETEROSTRUCTURES DURING ZINC DIFFUSION

被引：10

作者：

DILDEY, F

TREICHLER, R

AMANN, MC

SCHIER, M

EBBINGHAUS, G

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 09期

关键词：

D O I：

10.1063/1.101627

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：876 / 878

页数：3

共 11 条

[1]

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[10] OPEN-TUBE DIFFUSION TECHNIQUES FOR INP/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

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