REDUCTION IN POLYSILICON OXIDE LEAKAGE CURRENT BY ANNEALING PRIOR TO OXIDATION

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[2] RAMP BREAKDOWN STUDY OF DOUBLE POLYSILICON RAMS AS A FUNCTION OF FABRICATION PARAMETERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1597 - 1603

[3] DIMARIA DJ, 1975, APPL PHYS LETT, V27, P504

[4] FARAONE L, 1983, S VLSI, P110

[5] KIYOSUMI F, 1982, ELECTROCHEMICAL SOC, V821, P316

[6] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[8] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[9] SHINADA K, 1984, ELECTROCHEMICAL SOC, V842, P484

[1] EVIDENCE FOR SURFACE ASPERITY MECHANISM OF CONDUCTIVITY IN OXIDE GROWN ON POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4834 - 4836

[2] RAMP BREAKDOWN STUDY OF DOUBLE POLYSILICON RAMS AS A FUNCTION OF FABRICATION PARAMETERS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (07) : 1597 - 1603

[3] DIMARIA DJ, 1975, APPL PHYS LETT, V27, P504

[4] FARAONE L, 1983, S VLSI, P110

[5] KIYOSUMI F, 1982, ELECTROCHEMICAL SOC, V821, P316

[6] FORMATION AND COMPOSITION OF SURFACE LAYERS AND SOLUBILITY LIMITS OF PHOSPHORUS DURING DIFFUSION IN SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (12) : 1383 - 1381

[7] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) : 278 - +

[8] DOPANT SEGREGATION IN POLYCRYSTALLINE SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (11) : 5755 - 5763

[9] SHINADA K, 1984, ELECTROCHEMICAL SOC, V842, P484