X-RAY DIFFRACTION TOPOGRAPHS OF IMPERFECTIONS IN GALLIUM ARSENIDE BY ANOMALOUS TRANSMISSION OF X-RAYS

被引：13

作者：

JUNGBLUT.ED

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1965年 / 112卷 / 06期

关键词：

D O I：

10.1149/1.2423611

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：580 / &

相关论文

共 18 条

[1] BARTH H, 1958, J ELECTROCHEM SOC, VA 13, P792
[2] ELECTRICAL RESISTIVITY OF DISLOCATIONS
BASINSKI, ZS
DUGDALE, JS
HOWIE, A
[J]. PHILOSOPHICAL MAGAZINE, 1963, 8 (96): : 1989 - &
[3] BLACK JG, TO BE PUBLISHED
[4] BORRMANN G, 1958, Z NATURFORSCH, VA 13, P792
[5] EFFECT OF DISLOCATIONS ON BREAKDOWN IN SILICON P-N JUNCTIONS
CHYNOWETH, AG
PEARSON, GL
[J]. JOURNAL OF APPLIED PHYSICS, 1958, 29 (07) : 1103 - 1110
[6] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
LAVINE, MC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433
[7] GEROLD V, 1962, DIRECT OBSERVATIONS, P509
[8] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .1. LOCALIZED PHOTOMULTIPLICATION STUDIES ON MICROPLASMAS
HAITZ, RH
GOETZBERGER, A
SCARLETT, RM
SHOCKLEY, W
[J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (06) : 1581 - &
[9] STUDIES OF INDIVIDUAL DISLOCATIONS IN CRYSTALS BY X-RAY DIFFRACTION MICRORADIOGRAPHY
LANG, AR
[J]. JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) : 1748 - 1755
[10] LUBLIN P, PRIVATE COMMUNICATIO