FORMATION AND PROPERTIES OF TRANSITION LAYERS IN EPITAXIAL-FILMS

[1] AGRAFENIN YV, 1973, SBORNIK DEFEKTY STRU, P58

[2] AGRAFENIN YV, 1974, SBORNIK GENERATSIYA, P344

[3] ALEKSANDORV LN, 1970, MIKROELEKTRONIKA, V4, P13

[4] Aleksandrov L. N., 1972, Physica Status Solidi A, V11, P9, DOI 10.1002/pssa.2210110102

[5] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301

[6] INTERACTION OF A SCREW DISLOCATION WITH INTERFACES DURING THIN-FILMS GROWTH [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02): : 665 - 672

[7] ALEKSANDROV LN, 1974, JPN J APPL PHYS, P609

[8] ALEKSANDROV LN, 1974, IZV AN SSSR FIZ+, V38, P1528

[9] STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J]. THIN SOLID FILMS, 1974, 20 (01) : 1 - 10

[10] ALEKSANDROV LN, 1972, KRISTALLOGRAFIYA+, V17, P1031

[1] AGRAFENIN YV, 1973, SBORNIK DEFEKTY STRU, P58

[2] AGRAFENIN YV, 1974, SBORNIK GENERATSIYA, P344

[3] ALEKSANDORV LN, 1970, MIKROELEKTRONIKA, V4, P13

[4] Aleksandrov L. N., 1972, Physica Status Solidi A, V11, P9, DOI 10.1002/pssa.2210110102

[5] HETEROEPITAXY OF GERMANIUM THIN-FILMS ON SILICON BY ION SPUTTERING [J]. JOURNAL OF CRYSTAL GROWTH, 1974, 24 (OCT) : 298 - 301

[6] INTERACTION OF A SCREW DISLOCATION WITH INTERFACES DURING THIN-FILMS GROWTH [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (02): : 665 - 672

[7] ALEKSANDROV LN, 1974, JPN J APPL PHYS, P609

[8] ALEKSANDROV LN, 1974, IZV AN SSSR FIZ+, V38, P1528

[9] STEP MOTION OF GROWTH SURFACE IN INITIAL-STAGE OF SEMICONDUCTOR FILM EPITAXY WITH ION SPUTTERING [J]. THIN SOLID FILMS, 1974, 20 (01) : 1 - 10

[10] ALEKSANDROV LN, 1972, KRISTALLOGRAFIYA+, V17, P1031