EXCITON-POLARITON RELAXATION IN ZNSE SINGLE-CRYSTALS

被引：13

作者：

BOGANI, F

CARRARESI, L

FILORAMO, A

SAVASTA, S

机构：

[1] Dipartimento di Fisica, Università di Firenze, 50125 Firenze

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.46.9461

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the temperature dependence of the 1s-exciton energy and damping in a ZnSe single crystal. The measurement has been performed using a two-photon, frequency-resolved, nonlinear technique that provides accurate data and avoids complications due to spatial dispersion effects and high excitation levels. From the fit of the experimental data it is possible to determine the contribution to the relaxation due to various exciton-phonon interactions and due to impurities. The measured damping rates are compared with theoretical values reported in the literature. Finally the exciton-energy shift with temperature is analyzed: It is found to be mainly due to exciton-phonon interactions since thermal expansion only accounts for a few percent of the observed variation.

引用

页码：9461 / 9468

页数：8

共 30 条

[11] PHONON-INDUCED LIFETIME BROADENINGS OF ELECTRONIC STATES AND CRITICAL-POINTS IN SI AND GE [J].