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SILICON-ON-INSULATOR BIPOLAR-TRANSISTORS

被引：22
作者：
RODDER, M
ANTONIADIS, DA
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 06期
关键词：
D O I：
10.1109/EDL.1983.25701
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：193 / 195
页数：3
相关论文
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[2]   ELECTRICAL-PROPERTIES OF LINE DEFECTS IN THIN ZONE-RECRYSTALLIZED SILICON FILMS ON SILICON DIOXIDE [J].
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[4]   MICROSECOND CARRIER LIFETIMES IN SI FILMS PREPARED ON SIO2-COATED SI SUBSTRATES BY ZONE-MELTING RECRYSTALLIZATION AND BY SUBSEQUENT EPITAXIAL-GROWTH [J].
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TSIVIDIS Y, 1982, SOLID STATE ELECTRON, V25, P1099, DOI 10.1016/0038-1101(82)90148-4
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