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- [3] SPATIAL DEPENDENCE OF CARRIER LIFETIME IN THIN-FILMS OF SILICON ON SAPPHIRE[J]. APPLIED PHYSICS LETTERS, 1974, 25 (02) : 103 - 105KRANZER, D
- [4] CHARACTERISTICS OF MOSFETS FABRICATED IN LASER-RECRYSTALLIZED POLYSILICON ISLANDS WITH A RETAINING WALL STRUCTURE ON AN INSULATING SUBSTRATE[J]. ELECTRON DEVICE LETTERS, 1980, 1 (10): : 206 - 208LAM, HWTASCH, AFHOLLOWAY, TC
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- [9] N-CHANNEL DEEP-DEPLETION METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FABRICATED IN ZONE-MELTING-RECRYSTALLIZED POLYCRYSTALLINE SI FILMS ON SIO2[J]. APPLIED PHYSICS LETTERS, 1981, 39 (11) : 909 - 911TSAUR, BYGEIS, MWFAN, JCCSILVERSMITH, DJMOUNTAIN, RW