SPATIAL DEPENDENCE OF CARRIER LIFETIME IN THIN-FILMS OF SILICON ON SAPPHIRE

被引：24

作者：

KRANZER, D ^{[1
]}

机构：

[1] GEORGE C MARSHALL SPACE FLIGHT CTR,HUNTSVILLE,AL 35812

来源：

APPLIED PHYSICS LETTERS | 1974年 / 25卷 / 02期

关键词：

D O I：

10.1063/1.1655396

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：103 / 105

页数：3

共 12 条

[1] THIN-FILM SILICON - PREPATATION, PROPERTIES, AND DEVICE APPLICATIONS
ALLISON, JF
DUMIN, DJ
HEIMAN, FP
MUELLER, CW
ROBINSON, PH
[J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1490 - +
[2] DEEP LEVELS WITHIN FORBIDDEN GAP OF SILICON-ON-SAPPHIRE FILMS
DUMIN, DJ
[J]. SOLID-STATE ELECTRONICS, 1970, 13 (04) : 415 - &
[3] DIFFUSED DIODES IN SILICON-ON-SAPPHIRE
DUMIN, DJ
SILVER, RS
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (03) : 353 - +
[4] SURFACE EFFECTS ON P-N JUNCTIONS - CHARACTERISTICS OF SURFACE SPACE-CHARGE REGIONS UNDER NON-EQUILIBRIUM CONDITIONS
GROVE, AS
FITZGERALD, DJ
[J]. SOLID-STATE ELECTRONICS, 1966, 9 (08) : 783 - +
[5] VARIATIONS IN ELECTRICAL PROPERTIES OF SILICON FILMS ON SAPPHIRE USING MOS HALL TECHNIQUE
IPRI, AC
[J]. APPLIED PHYSICS LETTERS, 1972, 20 (01) : 1 - &
[6] MATARE HF, 1971, DEFECT ELECTRONICS S
[7] USE OF HCI GETTERING IN SILICON DEVICE PROCESSING
ROBINSON, PH
HEIMAN, FP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (01) : 141 - +
[8] HYDROGEN CHLORIDE AND CHLORINE GETTERING - EFFECTIVE TECHNIQUE FOR IMPROVING PERFORMANCE OF SILICON DEVICES
RONEN, RS
ROBINSON, PH
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (06) : 747 - +
[9] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[10] SILICON-ON-SAPPHIRE WITH MICROSECOND CARRIER LIFETIMES
SCHRODER, DK
RAICHOUD.P
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (09) : 455 - 457

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