ELECTRONIC AND GEOMETRIC STRUCTURE OF CLEAN INP(001) AND OF THE CAF2 INP(001) INTERFACE

被引：43

作者：

WEISS, W

HORNSTEIN, R

SCHMEISSER, D

GOPEL, W

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期

关键词：

D O I：

10.1116/1.584986

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：715 / 723

页数：9

共 39 条

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J].

ANDERSON, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :341-&

[2] COMPOSITIONAL AND STRUCTURAL-CHANGES THAT ACCOMPANY THERMAL ANNEALING OF (100) SURFACES OF GAAS, INP AND GAP IN VACUUM [J].

BAYLISS, CR ;

KIRK, DL .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (02) :233-&

[3] (110) SURFACE ATOMIC STRUCTURES OF COVALENT AND IONIC SEMICONDUCTORS [J].

CHADI, DJ .

PHYSICAL REVIEW B, 1979, 19 (04) :2074-2082

[4] PHOTOEMISSION-STUDIES OF THE INITIAL-STAGES OF OXIDATION OF GASB AND INP [J].

CHYE, PW ;

SU, CY ;

LINDAU, I ;

GARNER, CM ;

PIANETTA, P ;

SPICER, WE .

SURFACE SCIENCE, 1979, 88 (2-3) :439-460

[5] HIGH-EFFICIENCY 90-GHZ INP GUNN OSCILLATORS [J].

CROWLEY, JD ;

SOWERS, JJ ;

JANIS, BA ;

FANK, FB .

ELECTRONICS LETTERS, 1980, 16 (18) :705-706

[6]

DRAHTEN P, 1978, SURF SCI, pL162

[7] SURFACE OPTICAL PHONONS AND HYDROGEN CHEMISORPTION ON POLAR AND NON-POLAR FACES OF GAAS, INP, AND GAP [J].

DUBOIS, LH ;

SCHWARTZ, GP .

PHYSICAL REVIEW B, 1982, 26 (02) :794-802

[8] ANODIC OXIDE-GAAS AND INP INTERFACE FORMATION [J].

GEIB, KM ;

WILMSEN, CW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :952-957

[9]

GOUTURIER G, 1987, J VAC SC TECHNOL B, V5, P870

[10] N-CHANNEL MISFETS ON SEMI-INSULATING INP FOR LOGIC APPLICATIONS [J].

HENRY, L ;

LECROSNIER, D ;

LHARIDON, H ;

PAUGAM, J ;

PELOUS, G ;

RICHOU, F ;

SALVI, M .

ELECTRONICS LETTERS, 1982, 18 (02) :102-103

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