ANALYTIC MODEL OF SHOT NOISE IN DOUBLE-BARRIER RESONANT-TUNNELING DIODES

The shot noise in double-barrier diodes is analyzed using the stationary-state approach to resonant tunneling through the first quasi-bound level. Significant deviations from full shot noise are predicted. Shot-noise suppression occurs in the entire positive differential resistance region below the current peak, and shot-noise enhancement occurs in the negative differential resistance region above the peak. The physical basis for these effects is assumed to be the modulation of the double-barrier transmission probability by charge stored in the first quasi-bound level in the quantum well. The analysis confirms recent microwave noise measurements of high-speed double-barrier diodes.