GROWTH PRESSURE EFFECTS ON SI/SI1-XGEX CHEMICAL-VAPOR-DEPOSITION

被引：7

作者：

MATUTINOVICKRSTELJ, Z

CHASON, E

STURM, JC

机构：

[1] PRINCETON UNIV,DEPT ELECT ENGN,PRINCETON,NJ 08544

[2] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1995年 / 24卷 / 06期

关键词：

GROWTH PRESSURE EFFECTS; RAPID THERMAL CHEMICAL DEPOSITION; SI/SIGE;

D O I：

10.1007/BF02659731

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We studied the effects of growth pressure on Si1-xGex/Si heterostructures grown by rapid thermal chemical vapor deposition in the pressure range of 6-220 Torr. The material was characterized by photoluminescence (PL), x-ray reflectivity, and electrical measurements on resonant tunneling diodes (RTDs). High quality material was demonstrated throughout the pressure range, but a weaker PL intensity at higher pressure (220 Torr) indicates lower lifetimes. Interface abruptness was degraded at higher pressures due to gas transients. This was confirmed by x-ray reflectivity measurements and the performance of RTDs. We have established a low pressure limit to interface roughness of 0.2-0.5 nm, determined by x-ray reflectivity.

引用

页码：725 / 730

页数：6

共 14 条

[1]

CHASON E, 1991, MATER RES SOC SYMP P, V208, P351

[2]

DUTARTE D, UNPUB J VAC SCI TECH

[3] LOW-TEMPERATURE SILICON AND SI1-XGEX EPITAXY BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION USING HYDRIDES [J].