EVIDENCE FOR TRANSITIONS FROM LATERAL TO CONTINUOUS AND TO RAPID GROWTH IN GE-1AT-PERCENT-SI SOLID-SOLUTION

被引：9

作者：

LI, D

ECKLER, K

HERLACH, DM

机构：

[1] Northwestern Polytechnical, University, PRC

[2] Institut fur Raumsimulation, DLR, Köln

来源：

EUROPHYSICS LETTERS | 1995年 / 32卷 / 03期

关键词：

D O I：

10.1209/0295-5075/32/3/006

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The interrelationship ''undercooling-growth velocity-solidified structure'' was studied for Ge-1at%Si solid solution. Three structural morphologies, faceted twins, coarse dendrites and refined equiaxed grains, were observed in a wide range of undercoolings from 80 to 394 K achieved by a levitation technique. Corresponding to low, intermediate and high undercoolings, these types of microstructures originated from lateral, continuous and rapid crystal growth, respectively.

引用

页码：223 / 227

页数：5

共 16 条

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