PHASE IDENTIFICATION IN CU-DOPED INP SINGLE-CRYSTALS

被引：3

作者：

HARRIS, IR ^{[1
]}

SMITH, NA ^{[1
]}

COCKAYNE, B ^{[1
]}

MACEWAN, WR ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB,MALVERN WR14 3PS,WORCS,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 73卷 / 02期

关键词：

D O I：

10.1016/0022-0248(85)90298-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：233 / 241

页数：9

共 13 条

[1]

BARDSLEY W, 1974, J CRYST GROWTH, V24, P247

[2] IMPURITIES IN SINGLE-CRYSTAL INDIUM-PHOSPHIDE [J].

COCKAYNE, B ;

MACEWAN, WR ;

BROWN, GT .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (11) :2785-2794

[3] THE IDENTIFICATION OF PRECIPITATES IN V-DOPED INP SINGLE-CRYSTALS [J].

COCKAYNE, B ;

MACEWAN, WR ;

COURTNEY, SJ ;

HARRIS, IR ;

SMITH, NA .

JOURNAL OF CRYSTAL GROWTH, 1984, 69 (2-3) :610-612

[4] PRECIPITATE IDENTIFICATION IN GE-DOPED LEC GROWN INP SINGLE-CRYSTALS [J].

COCKAYNE, B ;

MACEWAN, WR ;

HARRIS, IR ;

SMITH, NA .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1984, 3 (11) :990-992

[5] CHARACTERIZATION OF RU-DOPED INP SINGLE-CRYSTALS [J].

COCKAYNE, B ;

MACEWAN, WR ;

HARRIS, IR ;

SMITH, NA .

JOURNAL OF MATERIALS SCIENCE LETTERS, 1985, 4 (06) :704-706

[6]

Hansen M., 1958, J ELECTROCHEM SOC, DOI DOI 10.1149/1.2428700

[7]

HARRIS I, UNPUB

[8] PRECIPITATE IDENTIFICATION IN CO-DOPED INP [J].

HARRIS, IR ;

SMITH, NA ;

COCKAYNE, B ;

MACEWAN, WR .

JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) :115-120

[9]

Majumdar S. N, UNPUB

[10]

MOFFATT WG, 1984, HDB BINARY PHASE DIA, V12

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