NOVEL TRANSPARENT AND ELECTROCONDUCTIVE AMORPHOUS-SEMICONDUCTOR - AMORPHOUS AGSBO3 FILM

被引：26

作者：

YASUKAWA, M ^{[1
]}

HOSONO, H ^{[1
]}

UEDA, N ^{[1
]}

KAWAZOE, H ^{[1
]}

机构：

[1] INST MOLEC SCI, OKAZAKI, AICHI 444, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1995年 / 34卷 / 3A期

关键词：

AMORPHOUS SEMICONDUCTOR; AGSBO3; THIN FILM; RF SPUTTERING; TRANSPARENCY; ELECTROCONDUCTIVE OXIDE;

D O I：

10.1143/JJAP.34.L281

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous AgSbO3 films prepared by RF sputtering under O-2 gas plasma and by subsequent postannealing at 500 degrees C in O-2 gas flow were found to be novel transparent and electroconductive amorphous semiconductors. The optical band gap of the films was similar to 2.3 eV. The electrical conductivity was similar to 10(-1)Omega(-1). cm(-1) at room temperature and its temperature dependence showed thermal activation-type behavior with an activation energy of similar to 0.23 eV. Hall measurements indicated n-type conduction. Concentration of carrier electrons and the Hall mobility at room temperature of the sample were similar to 3 x 10(17) cm(-3) and similar to 7 cm(2).V-1. s(-1), respectively. The value of the mobility was close to that of the polycrystalline films (similar to 8 cm(2) . V-1. s(-1)).

引用

页码：L281 / L284

页数：4

共 14 条

[1] ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS INDIUM OXIDE [J].