INDIUM DOPING OF HGCDTE LAYERS DURING GROWTH BY MOLECULAR-BEAM EPITAXY

被引：35

作者：

BOUKERCHE, M

RENO, J

SOU, IK

HSU, C

FAURIE, JP

机构：

来源：

关键词：

D O I：

10.1063/1.96818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1733 / 1735

页数：3

共 10 条

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[3] MOLECULAR-BEAM EPITAXIAL-GROWTH OF HIGH-QUALITY HGTE AND HG1-XCDXTE ONTO GAAS (001) SUBSTRATES
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[4] LATEST DEVELOPMENTS IN THE GROWTH OF CDXHG1-XTE AND CDTE-HGTE SUPER-LATTICES BY MOLECULAR-BEAM EPITAXY
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[J]. SURFACE SCIENCE, 1986, 168 (1-3) : 473 - 482
[6] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDXHG1-XTE
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[7] FAURIE JP, 1986, J VAC SCI TECHNO MAR
[8] KROGER FA, 1974, CHEM IMPERFECT CRYST, V2, pCH11
[9] VERIE CV, 1986, J VAC SCI TECHNO JUL
[10] LATTICE-DEFECTS IN SEMICONDUCTING HG1-XCDXTE ALLOYS .2. DEFECT STRUCTURE OF INDIUM-DOPED HG0.8CD0.2TE
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) : 2619 - 2625