NOISE MEASUREMENTS ON JUNCTION FIELD-EFFECT TRANSISTORS

被引：8

作者：

PALLOTTINO, GV ^{[1
]}

ZIRIZZOTTI, AE ^{[1
]}

机构：

[1] IST NAZL FIS NUCL,SEZ ROMA I,ROME,ITALY

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1994年 / 65卷 / 01期

关键词：

D O I：

10.1063/1.1145210

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We report the experimental results of noise measurements performed on junction field effect transistors (2SK162) in the frequency range 1-100 kHz, where the internal correlation effects are not negligible. The experimental data have been analyzed to determine the input current noise spectrum and the spectral energy sensitivity of the device, expressed in terms of noise temperature. We obtained V(n) congruent-to 0.6 Nv/square-root Hz, and I(n) congruent-to 4 fA/Hz at 1 Khz, I(n) congruent-to 25 fA/square-root Hz at 100 kHz. We also report and discuss the results of measurements performed at the temperature of 200 K, which show that the reduction of the noise is not very significant for this specific device.

引用

页码：212 / 220

页数：9

共 24 条

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