NOISE MEASUREMENTS ON SILICON J-FETS AT LOW-TEMPERATURE USING A VERY HIGH Q-SUPERCONDUCTING RESONATOR

被引：14

作者：

AYELA, F

BRET, JL

CHAUSSY, J

机构：

[1] Centre de Recherches sur les Très Basses Températures, Laboratoire Associé à l'Université Joseph Fourier de Grenoble, C.N.R.S., 38042 Grenoble Cedex

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 1991年 / 62卷 / 11期

关键词：

D O I：

10.1063/1.1142218

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Noise voltage and noise current measurements have been carried out at different temperatures on two kinds of low-noise silicon J-FET at moderately high frequencies up to 100 kHz. We have made careful noise current measurements by constructing a very low-loss superconducting resonator working in the kHz frequency range, whose quality factor reaches 3 x 10(5). At 10 kHz, the measured noise energy lies between 1.1 and 1.8 x 10(-24) W/Hz for both types of transistors, but the ratio between the noise voltage and the noise current exhibits pronounced differences depending on the device under test.

引用

页码：2816 / 2821

页数：6

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