THERMAL-STABILITY OF SILICIDE ON POLYCRYSTALLINE SI

被引:46
作者
HONG, QZ
HONG, SQ
DHEURLE, FM
HARPER, JME
机构
[1] CORNELL UNIV,DEPT MAT SCI & ENGN,ITHACA,NY 14853
[2] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
REACTION KINETICS; SEMICONDUCTORS; SILICIDES; SILICON;
D O I
10.1016/0040-6090(94)90370-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The thermal stability of silicide on polycrystalline Si (poly-Si) has been investigated. At elevated temperatures, the silicide/poly-Si layered structure becomes morphologically unstable, because of the grain growth of poly-Si. The driving force for the high temperature instability is the reduction of the grain boundary energy and surface energy of the poly-Si. In situ stress measurement shows that the grain growth is accompanied by a decrease in the compressive stress of as-deposited poly-Si. A change in crystallographic texture from (110) to (111) is also observed during the grain growth, indicating a process similar to that of secondary grain growth. A study of the grain growth kinetics shows that the grain growth of poly-Si is enhanced by fast diffusion in the silicide, but is not rate limited by the diffusion of the dominant diffusion species in the silicide. A strong correlation is found between the onset temperature for plastic deformation in the silicide and that of the grain growth in poly-Si.
引用
收藏
页码:479 / 484
页数:6
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