SURFACE-ENERGY-DRIVEN GRAIN-GROWTH DURING RAPID THERMAL ANNEALING (LESS THAN 10 S) OF THIN SILICON FILMS

被引：13

作者：

GARRISON, SM ^{[1
]}

CAMMARATA, RC ^{[1
]}

THOMPSON, CV ^{[1
]}

SMITH, HI ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.338055

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1652 / 1655

页数：4

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[9] SURFACE-ENERGY-DRIVEN SECONDARY GRAIN-GROWTH IN ULTRATHIN (LESS-THAN-100 NM) FILMS OF SILICON [J].

THOMPSON, CV ;

SMITH, HI .

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[10] SECONDARY GRAIN-GROWTH IN THIN-FILMS OF SEMICONDUCTORS - THEORETICAL ASPECTS [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (02) :763-772

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