SURFACE-ENERGY-DRIVEN SECONDARY GRAIN-GROWTH IN ULTRATHIN (LESS-THAN-100 NM) FILMS OF SILICON

被引：98

作者：

THOMPSON, CV ^{[1
]}

SMITH, HI ^{[1
]}

机构：

[1] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

关键词：

D O I：

10.1063/1.94842

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：603 / 605

页数：3

共 15 条

[1] CAHN RW, 1970, PHYSICAL METALLURGY, pCH19
[2] FOSTER K, 1963, T METALL SOC AIME, V227, P185
[3] ANOMALOUS LARGE GRAINS IN ALLOYED ALUMINUM THIN-FILMS .1. SECONDARY GRAIN-GROWTH IN ALUMINUM-COPPER FILMS
GANGULEE, A
DHEURLE, FM
[J]. THIN SOLID FILMS, 1972, 12 (02) : 399 - &
[4] JACODINE RJ, 1963, J ELECTROCHEM SOC, V110, P524
[5] SURFACE ENERGY AND SECONDARY RECRYSTALLISATION OF PLATINUM SHEET
MCLEAN, M
MYKURA, H
[J]. ACTA METALLURGICA, 1965, 13 (12): : 1291 - &
[6] GRAIN-GROWTH MECHANISMS IN POLYSILICON
MEI, L
RIVIER, M
KWARK, Y
DUTTON, RW
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) : 1791 - 1795
[7] MILLER WA, 1964, J I MET, V93, P125
[8] OVWENS CD, 1975, APPL PHYS LETT, V26, P569
[9] THE MECHANISM OF ORIENTATION IN SI GRAPHOEPITAXY BY LASER OR STRIP HEATER RECRYSTALLIZATION
SMITH, HI
VONTHOMPSON, C
GEIS, MW
LEMONS, RA
BOSCH, MA
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2050 - 2053
[10] SILICON-ON-INSULATOR BY GRAPHOEPITAXY AND ZONE-MELTING RECRYSTALLIZATION OF PATTERNED FILMS
SMITH, HI
GEIS, MW
THOMPSON, CV
ATWATER, HA
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 63 (03) : 527 - 546