MONOLAYER GROWTH AND STRUCTURE OF GA ON SI(111)

被引：51

作者：

ZEGENHAGEN, J

HYBERTSEN, MS

FREELAND, PE

PATEL, JR

机构：

来源：

PHYSICAL REVIEW B | 1988年 / 38卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.38.7885

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：7885 / 7888

页数：4

共 24 条

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