PLANAR CHANNELING IN GAAS INXGA1-XAS GAAS STRAINED-LAYER STRUCTURES

被引：9

作者：

STEVENS, JLE

ROBINSON, BJ

DAVIES, JA

THOMPSON, DA

JACKMAN, TE

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 04期

关键词：

D O I：

10.1063/1.342966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1510 / 1515

页数：6

共 8 条

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[4]

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ROBINSON, IK .

JOURNAL OF APPLIED PHYSICS, 1984, 56 (04) :1227-1229

[7] AXIAL CHANNELING STUDIES OF STRAINED-LAYER SUPERLATTICES .2. RUTHERFORD BACKSCATTERING AND CHANNELING ANALYSIS [J].

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DAWSON, LR ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 218 (1-3) :57-62

[8] CALCULATIONS OF PLANAR-CHANNELING EFFECTS ON RUTHERFORD SCATTERING IN SINGLE CRYSTALS [J].

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REMILLIEUX, J .

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