SYNTHESIS OF SUPERCONDUCTING EPITAXIAL-FILMS OF BA1-XKXBIO3 BY LASER-ABLATION

被引:8
作者
KIM, HT [1 ]
SUMI, A [1 ]
UWE, H [1 ]
FUJITA, J [1 ]
OHSHIMA, K [1 ]
机构
[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 10期
关键词
SUPERCONDUCTING EPITAXIAL FILMS; BA1-CHI-K-CHI-BIO3; BKB; LASER ABLATION;
D O I
10.1143/JJAP.32.4529
中图分类号
O59 [应用物理学];
学科分类号
摘要
Superconducting epitaxial films of Ba1-xKxBiO3 have been synthesized by laser ablation using a stoichiometric target (x=0.4). The films were deposited at substrate temperatures of 450-550-degrees-C in argon at the pressure of 1 Torr with successive annealing at 350-degrees-C in oxygen at pressure of 1 atm. The energy density of the laser was 1.5-2.5 J/cm2 per pulse. The deposition temperature and the laser power affect the crystalline property, the superconducting property and the surface morphology. The film deposited at the substrate temperature of 510-degrees-C has the highest onset T(c) of 28 K. The films oriented with respect to [100] are found to be epitaxial, using a four-circle diffractometer. Cracking in the superconducting films is not found. The film on the MgO substrate with small lattice mismatch exhibits higher zero-resistance T(c) than those on the other substrates, SrTiO3 and LaSrGaO4.
引用
收藏
页码:4529 / 4534
页数:6
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