EXCITONS IN LAYERED BII3 SINGLE-CRYSTALS

[1] AGRANOVICH VM, 1982, ELECTRONIC ENERGY TR

[2] AKAI I, IN PRESS J LUMIN

[3] BARDINI G, 1970, PHYS STAT SOL, V38, P325

[4] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7042 - 7044

[5] EXCITONS IN GASE POLYTYPES [J]. PHYSICS LETTERS A, 1967, A 24 (05) : 274 - &

[6] Chemia D. S., 1987, NONLINEAR OPTICAL PR

[7] RAMAN SCATTERING FROM ELECTRONIC EXCITATIONS IN N-TYPE SILICON CARBIDE [J]. PHYSICAL REVIEW B, 1972, 6 (02): : 498 - &

[8] EXISTENCE OF BIELECTRONS IN BII3 [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (09) : 1445 - 1450

[9] DIEKE RN, 1954, PHYS REV, V93, P99

[10] DIKAREV NM, 1958, UCH ZAP VOLOGODSK GO, P79

[1] AGRANOVICH VM, 1982, ELECTRONIC ENERGY TR

[2] AKAI I, IN PRESS J LUMIN

[3] BARDINI G, 1970, PHYS STAT SOL, V38, P325

[4] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 7042 - 7044

[5] EXCITONS IN GASE POLYTYPES [J]. PHYSICS LETTERS A, 1967, A 24 (05) : 274 - &

[6] Chemia D. S., 1987, NONLINEAR OPTICAL PR

[7] RAMAN SCATTERING FROM ELECTRONIC EXCITATIONS IN N-TYPE SILICON CARBIDE [J]. PHYSICAL REVIEW B, 1972, 6 (02): : 498 - &

[8] EXISTENCE OF BIELECTRONS IN BII3 [J]. SOLID STATE COMMUNICATIONS, 1973, 13 (09) : 1445 - 1450

[9] DIEKE RN, 1954, PHYS REV, V93, P99

[10] DIKAREV NM, 1958, UCH ZAP VOLOGODSK GO, P79