HALL EFFECT AND THERMOELECTRIC POWER IN SEMICONDUCTIVE TIO2

[11] IWASAKI H, 1965, PREPRINT ANNUAL M 3, P411

[12] KOBAYASHI A, 1957, SEMICONDUCTOR, P13

[13] KOBAYASHI A, 1957, SEMICONDUCTOR, P37

[14] THERMOGRAVIMETRIC STUDIES OF DEFECT STRUCTURE OF RUTILE (TIO2) [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (11) : 1579 - &

[15] NIIZEKI N, TO BE PUBLISHED

[16] THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF RUTILE (TIO2) [J]. PHYSICAL REVIEW, 1965, 139 (5A): : 1655 - &

[17] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427

[18] DEPENDENCE OF ELECTRICAL CONDUCTIVITY AND THERMOELECTRIC POWER OF PURE AND ALUMINUM-DOPED RUTILE ON EQUILIBRIUM OXYGEN PRESSURE AND TEMPERATURE [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1711 - &

[11] IWASAKI H, 1965, PREPRINT ANNUAL M 3, P411

[12] KOBAYASHI A, 1957, SEMICONDUCTOR, P13

[13] KOBAYASHI A, 1957, SEMICONDUCTOR, P37

[14] THERMOGRAVIMETRIC STUDIES OF DEFECT STRUCTURE OF RUTILE (TIO2) [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1962, 23 (11) : 1579 - &

[15] NIIZEKI N, TO BE PUBLISHED

[16] THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF RUTILE (TIO2) [J]. PHYSICAL REVIEW, 1965, 139 (5A): : 1655 - &

[17] RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02): : 420 - 427

[18] DEPENDENCE OF ELECTRICAL CONDUCTIVITY AND THERMOELECTRIC POWER OF PURE AND ALUMINUM-DOPED RUTILE ON EQUILIBRIUM OXYGEN PRESSURE AND TEMPERATURE [J]. PHYSICAL REVIEW, 1963, 130 (05): : 1711 - &