TYPE-B EPITAXIAL-GROWTH OF CEO2 THIN-FILM ON SI(111) SUBSTRATE

被引：16

作者：

NAGATA, H

YOSHIMOTO, M

KOINUMA, H

MIN, E

HAGA, N

机构：

[1] TOKYO INST TECHNOL,ENGN MAT RES LAB,YOKOHAMA,KANAGAWA 227,JAPAN

[2] HIMEJI INST TECHNOL,FAC SCI,KAMIGORI,HYOGO 67812,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 123卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(92)90004-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CeO2 has good lattice matching with Si and grows epitaxially on a clean surface of Si(111) under high vacuum. Type-B epitaxial growth was determined to be the most preferential for a CeO2 film using four-circle X-ray diffraction. An explanation of the type-B growth is also discussed.

引用

页码：1 / 4

页数：4

共 9 条

[1] GROWTH OF EPITAXIAL PRO2 THIN-FILMS ON HYDROGEN TERMINATED SI (111) BY PULSED LASER DEPOSITION [J].