ELECTRONIC-STRUCTURE AND THERMAL-STABILITY OF NI/SIC(100) INTERFACES

被引：34

作者：

HOCHST, H ^{[1
]}

NILES, DW ^{[1
]}

ZAJAC, GW ^{[1
]}

FLEISCH, TH ^{[1
]}

JOHNSON, BC ^{[1
]}

MEESE, JM ^{[1
]}

机构：

[1] AMOCO CORP,CORP RES DEPT,NAPERVILLE,IL 60566

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 04期

关键词：

D O I：

10.1116/1.584257

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1320 / 1325

页数：6

共 34 条

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[8] STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE [J].

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