STOICHIOMETRIC CHANGES IN THE SURFACE OF (100) CUBIC SIC CAUSED BY ION-BOMBARDMENT AND ANNEALING

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] BERMAN I, 1974, SILICON CARBIDE 1973, P42

[3] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2771 - 2778

[4] DAYAN M, 1985, J VAC SCI TECHNOL A, V3, P361, DOI 10.1116/1.573221

[5] Drowart J., 1960, Silicon Carbide, A High Temperature Semiconductor, P16

[6] AUGER ELECTRON SPECTROSCOPY OF SI [J]. SURFACE SCIENCE, 1970, 23 (02) : 347 - &

[7] SEMICONDUCTOR SURFACE STRUCTURES [J]. SURFACE SCIENCE REPORTS, 1983, 3 (4-5) : 193 - 300

[8] SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1636 - 1641

[9] LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[10] LIEBERT CH, 1968, NASA TN D4303

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] BERMAN I, 1974, SILICON CARBIDE 1973, P42

[3] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) : 2771 - 2778

[4] DAYAN M, 1985, J VAC SCI TECHNOL A, V3, P361, DOI 10.1116/1.573221

[5] Drowart J., 1960, Silicon Carbide, A High Temperature Semiconductor, P16

[6] AUGER ELECTRON SPECTROSCOPY OF SI [J]. SURFACE SCIENCE, 1970, 23 (02) : 347 - &

[7] SEMICONDUCTOR SURFACE STRUCTURES [J]. SURFACE SCIENCE REPORTS, 1983, 3 (4-5) : 193 - 300

[8] SURFACE STUDIES OF EPITAXIAL BETA-SIC ON SI(100) [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1636 - 1641

[9] LIAW HP, 1985, J ELECTROCHEM SOC, V132, P642

[10] LIEBERT CH, 1968, NASA TN D4303