STOICHIOMETRIC CHANGES IN THE SURFACE OF (100) CUBIC SIC CAUSED BY ION-BOMBARDMENT AND ANNEALING

被引：33

作者：

BELLINA, JJ ^{[1
]}

ZELLER, MV ^{[1
]}

机构：

[1] UNIV NOTRE DAME,NOTRE DAME,IN 46556

来源：

关键词：

D O I：

10.1016/0169-4332(86)90082-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：380 / 390

页数：11

共 16 条

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[12] PRODUCTION OF LARGE-AREA SINGLE-CRYSTAL WAFERS OF CUBIC SIC FOR SEMICONDUCTOR-DEVICES
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POWELL, JA
WILL, HA
[J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 460 - 462
[13] Seah M. P., 1972, SURFACE INTERFACE AN, V1, P2
[14] EASY METHOD TO ACCURATELY ALIGN ION-BOMBARDMENT GUNS FOR DEPTH PROFILING IN AUGER-ELECTRON SPECTROSCOPY
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HAAS, TW
GRANT, JT
HOOKER, MP
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1974, 45 (09) : 1113 - 1114
[15] VANBOMMEL AJ, 1983, SURFACE SCI, V48, P460
[16] WEHNER GK, 1962, 2309 GEN MILLS EL DI