ELECTRON BEAM EXCITATION IN LASER CRYSTALS

[1] Benoit Guillaume C., 1965, SOLID STATE COMMUN, V3, P19

[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[3] LASER EMISSION FROM N-TYPE GAAS EXCITED BY FAST ELECTRONS (77 DEGREES K 20-30 KV 0.2-2.0 A/CM2 DOPANT EFFECT EMITTED PHOTONS ] BAND GAP E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 91 - &

[4] PENETRATION OF ELECTRONS INTO LUMINESCENT MATERIALS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (522): : 751 - &

[5] ELECTRON-BEAM-PUMPED GAAS LASER (LIQUID HE E) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 139 - &

[6] LEVSHIN VL, 1964, SOVIET RESEARCHES LU, P75

[7] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &

[8] SKOBELTSYN DV, 1964, SOVIET RESEARCHES LU, P75

[9] SPENCER LB, 1959, NATL BUR STD MONOGRA, V1

[10] STIMLER M, 1965, APPL OPTICS, V4, P626

[1] Benoit Guillaume C., 1965, SOLID STATE COMMUN, V3, P19

[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358

[3] LASER EMISSION FROM N-TYPE GAAS EXCITED BY FAST ELECTRONS (77 DEGREES K 20-30 KV 0.2-2.0 A/CM2 DOPANT EFFECT EMITTED PHOTONS ] BAND GAP E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (05) : 91 - &

[4] PENETRATION OF ELECTRONS INTO LUMINESCENT MATERIALS [J]. PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (522): : 751 - &

[5] ELECTRON-BEAM-PUMPED GAAS LASER (LIQUID HE E) [J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 139 - &

[6] LEVSHIN VL, 1964, SOVIET RESEARCHES LU, P75

[7] OPTICALLY PUMPED SEMICONDUCTOR LASER (INSB 4.2 DEGREES K PUMPED BY GAAS LASER EMISSION AT 5.3 MU E) [J]. APPLIED PHYSICS LETTERS, 1965, 6 (04) : 70 - &

[8] SKOBELTSYN DV, 1964, SOVIET RESEARCHES LU, P75

[9] SPENCER LB, 1959, NATL BUR STD MONOGRA, V1

[10] STIMLER M, 1965, APPL OPTICS, V4, P626