LASER EMISSION FROM N-TYPE GAAS EXCITED BY FAST ELECTRONS (77 DEGREES K 20-30 KV 0.2-2.0 A/CM2 DOPANT EFFECT EMITTED PHOTONS ] BAND GAP E)

被引：14

作者：

CUSANO, DA

KINGSLEY, JD

机构：

来源：

APPLIED PHYSICS LETTERS | 1965年 / 6卷 / 05期

关键词：

D O I：

10.1063/1.1754181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：91 / &

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[1] BENOIT C, 1964, C INTERNATIONAL PHYS
[2] BENOIT C, 1964, SOLID STATE COMMUN, V2, P145
[3] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS
CUSANO, DA
[J]. SOLID STATE COMMUNICATIONS, 1964, 2 (11) : 353 - 358
[4] OPTICAL TRANSITIONS INVOLVING IMPURITIES IN SEMICONDUCTORS
DUMKE, WP
[J]. PHYSICAL REVIEW, 1963, 132 (05): : 1998 - &
[5] ELECTRON-BEAM-PUMPED GAAS LASER (LIQUID HE E)
HURWITZ, CE
KEYES, RJ
[J]. APPLIED PHYSICS LETTERS, 1964, 5 (07) : 139 - &
[6] RADIATIVE RECOMBINATION THROUGH IMPURITY LEVELS IN GAAS P-N JUNCTIONS
LUCOVSKY, G
REPPER, CJ
[J]. APPLIED PHYSICS LETTERS, 1963, 3 (05) : 71 - 72
[7] RECOMBINATION RADIATION IN GAAS BY OPTICAL AND ELECTRICAL INJECTION
NATHAN, MI
BURNS, G
[J]. APPLIED PHYSICS LETTERS, 1962, 1 (04) : 89 - 90