LIGHT-INDUCED PERTURBATION OF THE HIGH-TEMPERATURE EQUILIBRIUM IN PHOSPHORUS-DOPED A-SI-H

被引:17
作者
DENG, XM [1 ]
FRITZSCHE, H [1 ]
机构
[1] UNIV CHICAGO,DEPT PHYS,CHICAGO,IL 60637
来源
PHYSICAL REVIEW B | 1987年 / 36卷 / 17期
关键词
D O I
10.1103/PhysRevB.36.9378
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:9378 / 9380
页数:3
相关论文
共 6 条
[1]   ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].
GUHA, S ;
HUANG, CY ;
HUDGENS, SJ .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :50-51
[2]  
KAKALIOS J, 1987, AIP C P, V157, P179
[3]   REVERSIBLE CONDUCTIVITY CHANGES IN DISCHARGE-PRODUCED AMORPHOUS SI [J].
STAEBLER, DL ;
WRONSKI, CR .
APPLIED PHYSICS LETTERS, 1977, 31 (04) :292-294
[4]   THERMAL EQUILIBRATION IN DOPED AMORPHOUS-SILICON [J].
STREET, RA ;
KAKALIOS, J ;
HAYES, TM .
PHYSICAL REVIEW B, 1986, 34 (04) :3030-3033
[5]   THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON [J].
STREET, RA ;
KAKALIOS, J ;
TSAI, CC ;
HAYES, TM .
PHYSICAL REVIEW B, 1987, 35 (03) :1316-1333
[6]  
STUTZMANN M, UNPUB