DISPLACEMENT DAMAGE AND DOSE ENHANCEMENT IN GALLIUM-ARSENIDE AND SILICON

被引：19

作者：

GARTH, JC ^{[1
]}

BURKE, EA ^{[1
]}

WOOLF, S ^{[1
]}

机构：

[1] ARCON CORP,WALTHAM,MA 02154

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334128

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4382 / 4387

页数：6

共 10 条

[1]

BERGER MJ, 1968, CCC107 ORNL REP

[2]

BURKE EA, 1965, AD616245

[3]

CHADDERTON LT, 1965, RAD DAMAGE CRYSTALS, P19

[4]

CORBETT JW, 1975, POINT DEFECTS SOLIDS, V2, P91

[5]

FILIPPONE WL, 1983, ADV REACTOR COMPUTAT, V2, P649

[6] THE ROLE OF SCATTERED RADIATION IN THE DOSIMETRY OF SMALL DEVICE STRUCTURES [J].

GARTH, JC ;

BURKE, EA ;

WOOLF, S .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1980, 27 (06) :1459-1464

[7] MONTE-CARLO ANALYSIS OF DOSE PROFILES NEAR PHOTON IRRADIATED MATERIAL INTERFACES [J].

GARTH, JC ;

CHADSEY, WL ;

SHEPPARD, RL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2562-2567

[8] ENERGY-DEPENDENCE OF DEEP LEVEL INTRODUCTION IN ELECTRON-IRRADIATED GAAS [J].

PONS, D ;

MOONEY, PM ;

BOURGOIN, JC .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (04) :2038-2042

[9] CORRELATION OF DISPLACEMENT EFFECTS PRODUCED BY ELECTRONS PROTONS AND NEUTRONS IN SILICON [J].

VANLINT, VAJ ;

GIGAS, G ;

BARENGOLTZ, J .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1975, 22 (06) :2663-2668

[10]

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