CORRELATION OF DISPLACEMENT EFFECTS PRODUCED BY ELECTRONS PROTONS AND NEUTRONS IN SILICON

被引：37

作者：

VANLINT, VAJ ^{[1
]}

GIGAS, G ^{[1
]}

BARENGOLTZ, J ^{[1
]}

机构：

[1] CALTECH, JET PROP LAB, PASADENA, CA 91109 USA

来源：

关键词：

D O I：

10.1109/TNS.1975.4328186

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：2663 / 2668

页数：6

共 31 条

[1]

AFANASEV VN, 1971, SOV PHYS SEMICOND+, V5, P944

[2] RADIATION-INDUCED CHANGES IN SILICON PHOTOVOLTAIC CELLS [J].

BAICKER, JA ;

FAUGHNAN, BW .

[3]

BEATTY ME, 1969, D5028TN NASA TECHN N

BIELLEDA.D ;

POUGET, M .

NUCLEAR INSTRUMENTS & METHODS, 1971, 93 (03) :413-&

[5]

BILINSKI JR, 1963, IEEE T NUCL SCI, V12, P71

[6]

BROWN RR, 1969, CR814 NASA REP

[7]

CARTER JR, 1966, CR404 NASA CONTR REP

[8]

CORBETT JW, 1966, SOLID STATE PHYSI S7

CURTIS, OL .

[10]

DENNY JM, 1961, STL89870001RV000 REP