EFFECTS OF CRYSTALLIZATION ON TRAP STATE DENSITIES AT GRAIN-BOUNDARIES IN POLYCRYSTALLINE SILICON

被引：7

作者：

SEKI, S

KOGURE, O

TSUJIYAMA, B

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 08期

关键词：

D O I：

10.1109/EDL.1987.26662

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：368 / 370

页数：3

共 8 条

[1] POLYCRYSTALLINE-SILICON DEVICE TECHNOLOGY FOR LARGE-AREA ELECTRONICS [J].

HAWKINS, WG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (04) :477-481

[2] HALL MOBILITY IN CHEMICALLY DEPOSITED POLYCRYSTALLINE SILICON [J].

KAMINS, TI .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (11) :4357-&

[3] HYDROGENATION OF TRANSISTORS FABRICATED IN POLYCRYSTALLINE-SILICON FILMS [J].

KAMINS, TI ;

MARCOUX .

ELECTRON DEVICE LETTERS, 1980, 1 (08) :159-161

[4] CONDUCTIVITY BEHAVIOR IN POLYCRYSTALLINE SEMICONDUCTOR THIN-FILM TRANSISTORS [J].

LEVINSON, J ;

SHEPHERD, FR ;

SCANLON, PJ ;

WESTWOOD, WD ;

ESTE, G ;

RIDER, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1193-1202

[5] HYDROGEN PASSIVATION OF POLYSILICON MOSFETS FROM A PLASMA NITRIDE SOURCE [J].

POLLACK, GP ;

RICHARDSON, WF ;

MALHI, SDS ;

BONIFIELD, T ;

SHICHIJO, H ;

BANERJEE, S ;

ELAHY, M ;

SHAH, AH ;

WOMACK, R ;

CHATTERJEE, PK .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (11) :468-470

[6] ELECTRICAL PROPERTIES OF POLYCRYSTALLINE SILICON FILMS [J].

SETO, JYW .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (12) :5247-5254

[7]

Shichijo H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P228

[8]

Young R. T., 1982, Grain Boundaries in Semiconductors. Proceedings of the Materials Research Society Annual Meeting, P111

← 1 →