TEMPERATURE-DEPENDENCE OF PHOTOTHERMAL DISPLACEMENT SIGNAL IN SILICON

This letter presents the preliminary results of a study on the dependence of photothermal displacement signal on temperature in crystalline silicon wafers and coated silicon samples. The temperature enters indirectly into the signal as thermal conductivity, specific heat and thermal expansion coefficient of the material vary with temperature. The experimental results are consistent with that theoretically expected by taking into account the dependence of thermal conductivity from dopant concentration at low temperatures.