INDEPENDENTLY ADDRESSABLE INGAAS GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER ARRAYS

被引：24

作者：

VONLEHMEN, A

CHANGHASNAIN, C

WULLERT, J

CARRION, L

STOFFEL, N

FLOREZ, L

HARBISON, J

机构：

[1] N.J. 07701 583-585, Bellcore, Red Bank

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 07期

关键词：

LASERS AND LASER APPLICATIONS; ION IMPLANTATION; SEMICONDUCTOR LASERS;

D O I：

10.1049/el:19910368

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication of an 8 x 8 independently addressable InGaAs/GaAs vertical-cavity surface-emitting laser array based on planar ion-implantation processes is described. The uniformity of laser characteristics across the array under both pulsed and CW operation is discussed. Simultaneous addressing of multiple lasers is demonstrated.

引用

页码：583 / 585

页数：3

共 17 条

[1]

BOTEZ D, 1989, IEEE PHOTONICS TECHN, V2, P52

[2]

CHAN W, 1990, NOV P OPT SOC AM ANN

[3]

GEELS RS, 1990, OPT FIBER COMM C

[4] SURFACE EMITTING SEMICONDUCTOR-LASERS [J].