EMISSION CHARACTERISTICS OF AU-SI-BE LM ION-SOURCE

被引：8

作者：

ARIMOTO, H

MIYAUCHI, E

HASHIMOTO, H

机构：

[1] Optoelectronics Joint Research Lab, Kawasaki, Jpn, Optoelectronics Joint Research Lab, Kawasaki, Jpn

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 05期

关键词：

D O I：

10.1143/JJAP.24.L288

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L288 / L290

页数：3

共 15 条

[1] THE EMISSION CHARACTERISTICS OF AN ALUMINUM LIQUID-METAL ION-SOURCE
BELL, AE
SCHWIND, GA
SWANSON, LW
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (07) : 4602 - 4605
[2] IONIZATION MECHANISM OF GALLIUM ON A TUNGSTEN FIELD EMITTER
CULBERTSON, RJ
ROBERTSON, GH
SAKURAI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (06): : 1868 - 1870
[3] CHARACTERISTICS OF BE-SI-AU TERNARY ALLOY LIQUID-METAL ION SOURCES
GAMO, K
MATSUI, T
NAMBA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (11): : L692 - L694
[4] Hansen M., 1958, CONSTITUTION BINARY, P232
[5] HANSEN M, 1958, CONSTITUTION BINARY, P187
[6] KOMURO M, 1981, J APPL PHYS, V52, P2643
[7] FET FABRICATION USING MASKLESS ION-IMPLANTATION
KUBENA, RL
ANDERSON, CL
SELIGER, RL
JULLENS, RA
STEVENS, EH
LAGNADO, I
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (04): : 916 - 920
[8] MIYAUCHI E, 1983, JPN J APPL PHYS 2, V22, pL225
[9] SELECTIVE SI AND BE IMPLANTATION IN GAAS USING A 100 KV MASS-SEPARATING FOCUSED ION-BEAM SYSTEM WITH AN AU-SI-BE LIQUID-METAL ION-SOURCE
MIYAUCHI, E
ARIMOTO, H
HASHIMOTO, H
UTSUMI, T
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (04): : 1113 - 1116
[10] MIYAUCHI E, UNPUB NUCL INSTR