ATOMIC-STRUCTURE OF GRAIN-BOUNDARIES IN SEMICONDUCTORS

被引：34

作者：

BOURRET, A ^{[1
]}

BACMANN, JJ ^{[1
]}

机构：

[1] CEN,IRDI,DMECN,DEPT MET,SRM,F-38041 GRENOBLE,FRANCE

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 07期

关键词：

D O I：

10.1051/rphysap:01987002207056300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：563 / 568

页数：6

共 19 条

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[6] HARBEKE G, POLYCRYSTALLINE SEMI
[7] MODELS OF GRAIN BOUNDARIES IN THE DIAMOND LATTICE .1. TILT ABOUT (10)
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[8] ELECTRON-STATES ASSOCIATED WITH PARTIAL DISLOCATIONS IN SILICON
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[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 92 (01): : 83 - 89
[9] THEORETICAL-STUDY OF THE ELECTRONIC-STRUCTURE OF THE INCOHERENT (211) SIGMA=3 GRAIN-BOUNDARY IN GE BY THE RECURSION APPROACH
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